FFSP1265A SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 12 A, 650 V, D1, TO-220-2L FFSP1265A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSP1265A
Manufacturer: ON Semiconductor ↗
File Size: 202.32 KB
Datasheet: FFSP1265A-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 72 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 220
* 2LD CASE 340BB MARKING DIAGRAM AXYYKK FFSP 1265A A XYY KK FFSP1265A = Assembly Plant Code = Date Code (Year & We

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FFSP1265A SiC Schottky Diode ON Semiconductor

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