Description
Silicon Carbide (SiC) Schottky Diode * EliteSiC, 4 A, 650 V, D1, Power88 FFSM0465A .
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to.
Features
* Max Junction Temperature 175°C
* Avalanche Rated 23 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an
Applications
* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
DATA SHEET www. onsemi. com
Pin1
5
4 321
PQFN 8y8, 2P (Power88)
CASE 483AP
5. Cathode 3, 4. Anode 1, 2. Floating
Schottky Diode
MARKING DIAGRAM
AYWWKK FFSM 0465A
A YWW KK FFSM0465A
= Assembly Plant