FFSM0465A - SiC Schottky Diode

onsemi

FFSM0465A Datasheet Preview — Preview of FFSM0465A PDF

Datasheet Details

Part number	FFSM0465A
Manufacturer	onsemi
File Size	379.58 KB
Description	SiC Schottky Diode
Datasheet	FFSM0465A-onsemi.pdf

FFSM0465A Product details

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features

Max Junction Temperature 175°C.
Avalanche Rated 23 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.
This Device is Pb.
Free, Halogen Free/BFR Free and RoHS Compliant.

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Published: Apr 16, 2025 |