FFSB0665B Datasheet - ON Semiconductor

FFSB0665B SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diode EliteSiC, 6 A, 650 V, D2, D2PAK-2L FFSB0665B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequ.

FFSB0665B Features

* Max Junction Temperature 175C

* Avalanche Rated 24.5 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Free and are RoHS Compliant

FFSB0665B-ONSemiconductor.pdf