FFSB0665B SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 6 A, 650 V, D2, D2PAK-2L FFSB0665B Silicon Carbide (SiC) Schottky Diodes use a completely ne.

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Datasheet Specifications

Part number: FFSB0665B
Manufacturer: ON Semiconductor ↗
File Size: 333.87 KB
Datasheet: FFSB0665B-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175C
* Avalanche Rated 24.5 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25C, IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V) VRRM EAS 650 V 2

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FFSB0665B SiC Schottky Diode ON Semiconductor

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