FFSB0865B Silicon Carbide Schottky Diode

ON Semiconductor

Description

FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior s.

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Datasheet Specifications

Part number: FFSB0865B
Manufacturer: ON Semiconductor ↗
File Size: 248.33 KB
Datasheet: FFSB0865B-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fr

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) VRRM

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FFSB0865B Silicon Carbide Schottky Diode ON Semiconductor

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