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FFSB0865B

Silicon Carbide Schottky Diode

FFSB0865B Features

* Max Junction Temperature 175°C

* Avalanche Rated 33 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Fr

FFSB0865B Datasheet (248.33 KB)

Preview of FFSB0865B PDF

Datasheet Details

Part number:

FFSB0865B

Manufacturer:

ON Semiconductor ↗

File Size:

248.33 KB

Description:

Silicon carbide schottky diode.
FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior s.

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FFSB0865B Silicon Carbide Schottky Diode ON Semiconductor

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