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FFSB10120A-F085 Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode 1200 V, 10 A FFSB10120A-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 100 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters www. onsemi. com 1.,3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK2 (TO
* 263
* 2L) CASE 418BK MARKING DIAGRAM $Y&Z&3&K FFSB 10120A $Y = ON Semiconductor Logo &Z = Assembl

FFSB10120A-F085 Distributors

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📌 All Tags

FFSB10120A-F085 Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSB10120A-F085-like datasheet
FFSB10120A
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FFSB0665A
FFSB0665B
FFSB0665B-F085