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FFSB0665A SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 6 A, 650 V, D1, D2PAK-2L FFSB0665A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 36 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1.,3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK
* 2L (TO
* 263
* 2L) CASE 418BK MARKING DIAGRAM AYWWZZ FFSB 0665A A YWW ZZ FFSB0665A = Assembly Location

FFSB0665A Distributors

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