FFSB0865B-F085 Datasheet - ON Semiconductor

FFSB0865B-F085 Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, red.

FFSB0865B-F085 Features

* Max Junction Temperature 175°C

* Avalanche Rated 33 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* AEC

* Q101 Qualified and PPAP Capable

FFSB0865B-F085-ONSemiconductor.pdf