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FFSB0865B-F085 Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superio.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH,

FFSB0865B-F085 Distributors

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📌 All Tags

FFSB0865B-F085 Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSB0865B-F085-like datasheet
FFSB0865B
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FFSB0665B
FFSB0665B-F085
FFSB10120A