* Max Junction Temperature 175°C
* Avalanche Rated 24.5 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable
FFSB0665B-F085 Datasheet (375.87 KB)
FFSB0665B-F085
375.87 KB
Silicon carbide schottky diode.
Silicon Carbide Schottky Diode
650 V, 6 A
FFSB0665B-F085
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superio.
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