FFSB10120A Datasheet - ON Semiconductor

FFSB10120A Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSB10120A Features

* Max Junction Temperature 175°C

* Avalanche Rated 100 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR F

FFSB10120A-ONSemiconductor.pdf