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FFSB10120A Silicon Carbide Schottky Diode

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Description

FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 100 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR F

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com 1., 3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK
* 3 (TO
* 263, 3
* LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 10120A $Y &Z &3 &K FFSB10120A = ON Semiconductor L

FFSB10120A Distributors

📁 Related Datasheet

FFSM0465A FFSP3065A

📌 All Tags

FFSB10120A Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSB10120A-like datasheet
FFSB10120A-F085
FFSB1065B-F085
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FFSB0665B
FFSB0665B-F085