FFSM0865A SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 8 A, 650 V, D1, Power88 FFSM0865A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSM0865A
Manufacturer: ON Semiconductor ↗
File Size: 392.20 KB
Datasheet: FFSM0865A-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 37 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com Pin1 5 4 321 PQFN 8y8, 2P (Power88) CASE 483AP 5. Cathode 3, 4. Anode 1, 2. Floating Schottky Diode MARKING DIAGRAM AYWWKK FFSM 0865A A YWW KK FFSM0865A = Assembly Plant

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FFSM0865A SiC Schottky Diode ON Semiconductor

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