FFSM1265A Datasheet - ON Semiconductor

FFSM1265A Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSM1265A Features

* Max Junction Temperature 175°C

* Avalanche Rated 79 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* This Device is Pb

* Free, Halogen Free/BFR Free an

FFSM1265A-ONSemiconductor.pdf