FFSM0665B SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 6 A, 650 V, D2, Power88 FFSM0665B Silicon Carbide (SiC) Schottky Diodes use a completely ne.

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Datasheet Specifications

Part number: FFSM0665B
Manufacturer: ON Semiconductor ↗
File Size: 362.23 KB
Datasheet: FFSM0665B-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 24.5 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 650 V Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 9.9 A, L = 0.5 mH, V =

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FFSM0665B SiC Schottky Diode ON Semiconductor

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