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FFSM1065B Silicon Carbide Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 10 A, 650 V, D2, Power88 FFSM1065B .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 650 V Single Pulse Avalanche Energy (starting TJ = EAS 49 mJ 25°C, IAS = 14

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