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FFSM0665A SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 6 A, 650 V, D1, Power88 FFSM0665A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 20 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com Pin1 5 4 321 PQFN 8y8, 2P (Power88) CASE 483AP 5. Cathode 3, 4. Anode Schottky Diode MARKING DIAGRAM AYWWKK FFSM 0665A A YWW KK FFSM0665A = Assembly Plant Code = Date Cod

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