Part number:
FFSM0665A
Manufacturer:
File Size:
358.55 KB
Description:
Sic schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 20 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an
FFSM0665A Datasheet (358.55 KB)
FFSM0665A
358.55 KB
Sic schottky diode.
📁 Related Datasheet
FFSM0665B - SiC Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88
FFSM0665B
Silicon Carbide (SiC) Schottky Diodes use a pletely new techno.
FFSM0465A - SiC Schottky Diode
(onsemi)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, Power88
FFSM0465A
Description Silicon Carbide (SiC) Schottky Diodes use a pletely .
FFSM0865A - SiC Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, Power88
FFSM0865A
Description Silicon Carbide (SiC) Schottky Diodes use a pletely .
FFSM0865B - SiC Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
FFSM0865B
Silicon Carbide (SiC) Schottky Diodes use a pletely new techno.
FFSM1065B - Silicon Carbide Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
FFSM1065B
Description Silicon Carbide (SiC) Schottky Diodes use a plete.
FFSM1265A - Silicon Carbide Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, Power88
FFSM1265A
Description Silicon Carbide (SiC) Schottky Diodes use a pletely.
FFSB0665A - SiC Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, D2PAK-2L
FFSB0665A
Description Silicon Carbide (SiC) Schottky Diodes use a pletely.
FFSB0665B - SiC Schottky Diode
(ON Semiconductor)
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L
FFSB0665B
Silicon Carbide (SiC) Schottky Diodes use a pletely new techno.