FFSM0865B SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 8 A, 650 V, D2, Power88 FFSM0865B Silicon Carbide (SiC) Schottky Diodes use a completely ne.

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Datasheet Specifications

Part number: FFSM0865B
Manufacturer: ON Semiconductor ↗
File Size: 386.39 KB
Datasheet: FFSM0865B-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fr

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 650 V Single Pulse Avalanche Energy (starting TC = EAS 25°C, IL(pk) = 11.5 A,

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FFSM0865B SiC Schottky Diode ON Semiconductor

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