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FFSP20120A

Silicon Carbide Schottky Diode

FFSP20120A Features

* Max Junction Temperature 175°C

* Avalanche Rated 200 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* This Device is Pb

* Free, Halogen Free/BFR Free a

FFSP20120A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSP20120A Datasheet (298.99 KB)

Preview of FFSP20120A PDF

Datasheet Details

Part number:

FFSP20120A

Manufacturer:

ON Semiconductor ↗

File Size:

298.99 KB

Description:

Silicon carbide schottky diode.

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TAGS

FFSP20120A Silicon Carbide Schottky Diode ON Semiconductor

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