FFSP20120A Silicon Carbide Schottky Diode

ON Semiconductor

Description

Silicon Carbide Schottky Diode 1200 V, 20 A FFSP20120A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSP20120A
Manufacturer: ON Semiconductor ↗
File Size: 298.99 KB
Datasheet: FFSP20120A-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free a

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 220
* 2LD CASE 340BB MARKING DIAGRAM $Y&Z&3&K FFSP 15120A © Semiconductor Components Industries, LLC, 2016 January, 2020

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FFSP20120A Silicon Carbide Schottky Diode ON Semiconductor

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