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FFSP2065BDN-F085 Silicon Carbide Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 650 V, D2, TO-220-3L Product Preview FFSP2065BDN-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC
* Q101 Qualified
* These Devices are P

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters This document contains information on a product under development. onsemi reserves the right to change or discontinue this product without notice. DATA SHEET www. onsemi. com 1 Anode 2

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