FFSP2065B Silicon Carbide Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 650 V, D2, TO-220-2L FFSP2065B Silicon Carbide (SiC) Schottky Diodes use a completely .

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Datasheet Specifications

Part number: FFSP2065B
Manufacturer: ON Semiconductor ↗
File Size: 248.93 KB
Datasheet: FFSP2065B-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175C
* Avalanche Rated 94 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free and are RoHS Compliant Ap

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuit ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise specified) Symbol Parameter Value Unit VRRM EAS IF Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) Continuous Rectified Forward Curre

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FFSP2065B Silicon Carbide Schottky Diode ON Semiconductor

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