FGY100T120SWD IGBT

ON Semiconductor

Description

IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 100 A FGY100T120SWD .
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3. lead package, FGY100T120SWD offers the optimum perform.

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Datasheet Specifications

Part number: FGY100T120SWD
Manufacturer: ON Semiconductor ↗
File Size: 280.93 KB
Datasheet: FGY100T120SWD-ONSemiconductor.pdf
Description: IGBT

Features

* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Smooth and Optimized Switching
* Low Switching Loss

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FGY100T120SWD IGBT ON Semiconductor

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