FGY100T65SCDT Datasheet, Igbt, ON Semiconductor

FGY100T65SCDT Features

• Igbt
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Vol

PDF File Details

Part number:

FGY100T65SCDT

Manufacturer:

ON Semiconductor ↗

File Size:

421.92kb

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📄 Datasheet

Description:

Igbt. Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performanc

FGY100T65SCDT Application

• Applications where low conduction and switching losses are essential. Features
• Maximum Junction Temperature: TJ = 175°C
• Positive

TAGS

FGY100T65SCDT

ON Semiconductor

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