FGY4L160T120SWD N-Channel IGBT

ON Semiconductor

Description

IGBT * Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A FGY4L160T120SWD .
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4. lead package, FGY4L160T120SWD offers the optimum perfo.

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Datasheet Specifications

Part number: FGY4L160T120SWD
Manufacturer: ON Semiconductor ↗
File Size: 233.73 KB
Datasheet: FGY4L160T120SWD-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Smooth and Optimized Switching
* Low Switching Loss

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FGY4L160T120SWD N-Channel IGBT ON Semiconductor

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