FGY4L160T120SWD Datasheet - ON Semiconductor

FGY4L160T120SWD N-Channel IGBT

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4 *lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high *efficiency operations in various applications like Solar Inverter, UPS and ESS. Feat.

FGY4L160T120SWD Features

* Maximum Junction Temperature TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Smooth and Optimized Switching

* Low Switching Loss

* RoHS Compliant Applications

* Solar Inverter

* U

FGY4L160T120SWD-ONSemiconductor.pdf