FGY4L160T120SWD Datasheet, Igbt, ON Semiconductor

FGY4L160T120SWD Features

• Igbt
• Maximum Junction Temperature TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Smooth and Optimized

PDF File Details

Part number:

FGY4L160T120SWD

Manufacturer:

ON Semiconductor ↗

File Size:

233.73kb

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📄 Datasheet

Description:

N-channel igbt. Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4

lead package, FGY4L160T120SWD offers

FGY4L160T120SWD Application

• Applications like Solar Inverter, UPS and ESS. Features
• Maximum Junction Temperature TJ = 175°C
• Positive Temperature Coefficien

TAGS

FGY4L160T120SWD

ON Semiconductor

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