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FGY4L160T120SWD

N-Channel IGBT

FGY4L160T120SWD Features

* Maximum Junction Temperature TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Smooth and Optimized Switching

* Low Switching Loss

* RoHS Compliant Applications

* Solar Inverter

* U

FGY4L160T120SWD General Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4

*lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high

*efficiency operations in various applications like Solar Inverter, UPS and ESS. Feat.

FGY4L160T120SWD Datasheet (233.73 KB)

Preview of FGY4L160T120SWD PDF

Datasheet Details

Part number:

FGY4L160T120SWD

Manufacturer:

ON Semiconductor ↗

File Size:

233.73 KB

Description:

N-channel igbt.

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FGY4L160T120SWD N-Channel IGBT ON Semiconductor

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