FGY120T65SPD-F085 Datasheet, Igbt, ON Semiconductor

FGY120T65SPD-F085 Features

• Igbt
• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co
• efficient

PDF File Details

Part number:

FGY120T65SPD-F085

Manufacturer:

ON Semiconductor ↗

File Size:

473.92kb

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📄 Datasheet

Description:

Igbt. VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt

FGY120T65SPD-F085 Application

• Applications
• Rugged Transient Reliability
• Outstanding Parallel Operation Performance with Balance Current Sharing
• Low

TAGS

FGY120T65SPD-F085

ON Semiconductor

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