FGY120T65SPD-F085 Datasheet - ON Semiconductor

FGY120T65SPD-F085 IGBT

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation .

FGY120T65SPD-F085 Features

* Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A

* Maximum Junction Temperature : TJ = 175°C

* Positive Temperature Co

* efficient

* Tight Parameter Distribution

* High Input Impedance

* 100% of the Parts are Dynamically Tested

FGY120T65SPD-F085-ONSemiconductor.pdf