FGY100T120RWD Datasheet - ON Semiconductor

Power IGBT

FGY100T120RWD Features

* Low Conduction Loss and Optimized Switching

* Maximum Junction Temperature

* TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* 100% of the Parts are Dynamically Tested

* Short Circuit Rated

FGY100T120RWD General Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3 *lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, da.

FGY100T120RWD Datasheet (279.60 KB)