FGY100T120RWD Datasheet, Igbt, ON Semiconductor

FGY100T120RWD Features

• Igbt
• Low Conduction Loss and Optimized Switching
• Maximum Junction Temperature
• TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation

PDF File Details

Part number:

FGY100T120RWD

Manufacturer:

ON Semiconductor ↗

File Size:

279.60kb

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📄 Datasheet

Description:

Power igbt. Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3

lead package, FGY100T120RWD offers th

FGY100T120RWD Application

• Applications like motor control, UPS, data center and high
• power switch. Features
• Low Conduction Loss and Optimized Switching

TAGS

FGY100T120RWD

ON Semiconductor

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