FGY100T120RWD Power IGBT

ON Semiconductor

Description

IGBT * Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.4 V, 100 A FGY100T120RWD .
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3. lead package, FGY100T120RWD offers the optimum perform.

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Datasheet Specifications

Part number: FGY100T120RWD
Manufacturer: ON Semiconductor ↗
File Size: 279.60 KB
Datasheet: FGY100T120RWD-ONSemiconductor.pdf
Description: Power IGBT

Features

* Low Conduction Loss and Optimized Switching
* Maximum Junction Temperature
* TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* 100% of the Parts are Dynamically Tested
* Short Circuit Rated

Applications

* like motor control, UPS, data center and high

FGY100T120RWD Distributors

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