FGY100T120RWD - Power IGBT

ON Semiconductor

FGY100T120RWD Datasheet Preview — Preview of FGY100T120RWD PDF

Datasheet Details

Part number	FGY100T120RWD
Manufacturer	ON Semiconductor ↗
File Size	279.60 KB
Description	Power IGBT
Datasheet	FGY100T120RWD-ONSemiconductor.pdf

FGY100T120RWD Product details

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3 lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high power switch.

Features

Low Conduction Loss and Optimized Switching.
Maximum Junction Temperature.
TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
100% of the Parts are Dynamically Tested.
Short Circuit Rated.
RoHS Compliant.

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Published: Feb 5, 2023 |