KSC2383 Datasheet - ON Semiconductor

KSC2383 NPN Epitaxial Silicon Transistor

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NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector Base Voltage 160 V VCEO Collector Emitter Voltage 160 V VEBO Emitter Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage.

KSC2383-ONSemiconductor.pdf