MMBT3906LT1 - General Purpose Transistor
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3906LT1/D
General Purpose Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT3906LT1
.
MMBT3906LT1 - PNP Transistor
(Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3906LT1 TRANSISTOR ( PNP)
FEATURES
·As plementary t.
MMBT3906LT1 - TRANSISTOR
(WEJ)
RoHS MMBT3906LT1
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
SOT-23
GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1.
DCollector Dissipati.
MMBT3906LT1 - PNP Transistor
(TGS)
TIGER ELECTRONIC CO.,LTD
MMBT3906LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT3906LT1 is designed for general purpose switching and ampli.
MMBT3906LT1G - PNP Transistor
(ON Semiconductor)
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Con.
MMBT3906L - PNP Small Signal Transistor
(Taiwan Semiconductor)
Small Signal Product
MMBT3906L
Taiwan Semiconductor
350mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction - Surface devic.
MMBT3906L - PNP Silicon Transistor
(ON Semiconductor)
General Purpose Transistor
PNP Silicon
MMBT3906L, SMMBT3906L
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Cont.
MMBT3906LP - 40V PNP SMALL SIGNAL TRANSISTOR
(Diodes)
ADVANCE INFORMATION
MMBT3906LP
40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006
Features
BVCEO > -40V IC = -200mA High Collector Current PD = 1000mW.
MMBT3906 - 40V PNP SMALL SIGNAL TRANSISTOR
(Diodes)
Features
• Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Fr.
MMBT3906 - PNP Transistor
(CITC)
MMBT3906
200mA General Purpose PNP Epitaxial Planar Transistor
■ Features
• High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=1mA).
• Small l.
