MTP40N10E Datasheet - ON Semiconductor

MTP40N10E Power MOSFET

MTP40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commuta.

MTP40N10E Features

* 2000 1000 0

* 10 Crss

* 5 0 5 VGS VDS Coss 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) MTP40N10E 10 80 9 VGS 72 QT 8 64

MTP40N10E-ONSemiconductor.pdf