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MTP4N50E Datasheet - ON Semiconductor

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Datasheet Details

Part number:

MTP4N50E

Manufacturer:

ON Semiconductor ↗

File Size:

252.08 KB

Description:

High energy power fet.

MTP4N50E, High Energy Power FET

MTP4N50E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the

MTP4N50E Features

* n current versus re

* applied drain voltage when the source

* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or ha

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