* n current versus re
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or ha
MTP4N50E Datasheet (252.08 KB)
MTP4N50E
252.08 KB
High energy power fet.
MTP4N50E
Designer’s™ Data Sheet TMOS E
*FET.™ High Energy Power FET
N
*Channel Enhancement
*Mode Silicon Gate
This advanced high .
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