MTP4N50E Datasheet - ON Semiconductor

MTP4N50E High Energy Power FET

MTP4N50E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the .

MTP4N50E Features

* n current versus re

* applied drain voltage when the source

* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or ha

MTP4N50E-ONSemiconductor.pdf