Part number:
MTP4N50E
Manufacturer:
File Size:
252.08 KB
Description:
High energy power fet.
Datasheet Details
Part number:
MTP4N50E
Manufacturer:
File Size:
252.08 KB
Description:
High energy power fet.
MTP4N50E, High Energy Power FET
MTP4N50E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain to source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the
MTP4N50E Features
* n current versus re
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or ha
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