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NFAM3512L7B - Intelligent Power Module

Datasheet Summary

Description

Pin Name Description 1 VS(U) High-Side Bias Voltage GND for U Phase IGBT Driving (2) Dummy 3 VB(U) High-Side Bias Voltage for U Phase IGBT Driving 4 VDD(UH) High-Side Bias Voltage for U Phase IC (5) Dummy 6 HIN(U) Signal Input for High-Side U Phase 7 VS(V)

Features

  • including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module’s internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. Features.
  • 1200 V 35 A 3-Phase FS7 IGBT Inverte.

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Datasheet preview – NFAM3512L7B

Datasheet Details

Part number NFAM3512L7B
Manufacturer ON Semiconductor
File Size 651.68 KB
Description Intelligent Power Module
Datasheet download datasheet NFAM3512L7B Datasheet
Additional preview pages of the NFAM3512L7B datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 35 A NFAM3512L7B NFAM3512L7B is an advanced IPM module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module’s internal IGBTs.
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