Part number:
NGD8205ANT4G
Manufacturer:
File Size:
109.78 KB
Description:
Ignition igbt.
* monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features
* Ideal for Coil
* on
* Plug and
NGD8205ANT4G Datasheet (109.78 KB)
NGD8205ANT4G
109.78 KB
Ignition igbt.
📁 Related Datasheet
NGD8205AN - Ignition IGBT
(ON Semiconductor)
NGD8205N, NGD8205AN
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ.
NGD8205N - Ignition IGBT
(ON Semiconductor)
NGD8205N, NGD8205AN
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ.
NGD8205NT4G - Ignition IGBT
(ON Semiconductor)
NGD8205N, NGD8205AN
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ.
NGD8201AN - Ignition IGBT
(ON Semiconductor)
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.
NGD8201ANT4G - Ignition IGBT
(ON Semiconductor)
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.
NGD8201B - Ignition IGBT
(ON Semiconductor)
NGD8201B
Ignition IGBT, 20 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integratin.
NGD8201N - Ignition IGBT
(ON)
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.
NGD8201NT4 - Ignition IGBT
(ON)
NGD8201N Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating.