NSS12100M3T5G Datasheet - ON Semiconductor

NSS12100M3T5G - 12 V 1 A / Low VCE(sat) PNP Transistor

NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cor.

NSS12100M3T5G Features

* http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 350 mW COLLECTOR 3 1 BASE 2 EMITTER

* ăHigh Continuous Current Capability (1 A)

* ăLow VCE(sat) (150 mV Typical @ 500 mA)

* ăSmall Size 1.2 mm x 1.2 mm

* ăThis is a Pb-Free Device Benefi

NSS12100M3T5G_ONSemiconductor.pdf