Part number:
NTD18N06L
Manufacturer:
File Size:
208.05 KB
Description:
Power mosfet.
MOSFET
* Power, N-Channel, Logic Level, DPAK
18 A, 60 V
NTD18N06L, NTDV18N06L
Designed for low voltage, high speed switching applications in.
* AEC Q101 Qualified
* NTDV18N06L
* These Devices are Pb
* Free and are RoHS Compliant Typical Applications
* Power Supplies
* Converters
* Power Motor Controls
* Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
NTD18N06L Datasheet (208.05 KB)
NTD18N06L
208.05 KB
Power mosfet.
MOSFET
* Power, N-Channel, Logic Level, DPAK
18 A, 60 V
NTD18N06L, NTDV18N06L
Designed for low voltage, high speed switching applications in.
📁 Related Datasheet
NTD18N06 - Power MOSFET
(ON Semiconductor)
NTD18N06 Power MOSFET 18 Amps, 60 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and p.
NTD18N06L - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
NTD18N06L
FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-R.
NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD106B - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability a.
NTD110N02R - Power MOSFET
(ON Semiconductor)
NTD110N02R, STD110N02R
MOSFET – Power, N-Channel, DPAK
24 V, 110 A
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.
NTD110N02R-001G - N-Channel MOSFET
(VBsemi)
NTD110N02R-001G-VB
NTD110N02R-001G-VB Datasheet
N-Channel 20-V (D-S)175 _C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0045 @ VGS.
NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD122C - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD122C
Features
Thyristor/Diode Module, 130A
• Improved glass passivation for high reliability • Exceptional stability a.