* Shielded Gate MOSFET Technology
* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A
* Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design
* 100% UIL te
NTMFS08N003C Datasheet (1.35 MB)
NTMFS08N003C
1.35 MB
N-channel power mosfet.
NTMFS08N003C N-Channel Shielded Gate PowerTrench® MOSFET
www.onsemi.com
NTMFS08N003C
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 147 A, 3.1 m.
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