NTMFS10N3D2C N-Channel MOSFET

ON Semiconductor

Description

NTMFS10N3D2C MOSFET * Power Trench, N‐Channel, Shielded Gate 100 V, 151 A, 3.2 mW General .
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: NTMFS10N3D2C
Manufacturer: ON Semiconductor ↗
File Size: 369.80 KB
Datasheet: NTMFS10N3D2C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A
* Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Test

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20

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NTMFS10N3D2C N-Channel MOSFET ON Semiconductor

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