NTMFS10N7D2C N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Power Trench, N-Channel, Shielded Gate 100 V, 78 A, 7.2 mW NTMFS10N7D2C General .
This N. Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: NTMFS10N7D2C
Manufacturer: ON Semiconductor ↗
File Size: 444.47 KB
Datasheet: NTMFS10N7D2C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Tested
* These Devices ar

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage 20 V ID Drain Cu

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NTMFS10N7D2C N-Channel MOSFET ON Semiconductor

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