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NVD4856N Power MOSFET

NVD4856N Description

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N *Channel, DPAK/IPAK .

NVD4856N Features

* Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching Losses

NVD4856N Applications

* Requiring Unique Site and Control Change Requirements; AEC
* Q101 Qualified and PPAP Capable
* These Devices are Pb
* Free and are RoHS Compliant Applications
* VCORE Applications
* DC
* DC Converters
* Low Side Switching MAXIMUM RATINGS (TJ = 25°C

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Power MOSFET ON Semiconductor
ON Semiconductor NVD4856N-like datasheet