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NVDD5894NL
Power MOSFET
40 V, 10 mW, 64 A, Dual N−Channel DPAK−5L
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation (Note 1)
RqJC
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ&A 3)
Power (Notes
Dissipation 1 & 2)
RqJA
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
P
NVDD5894NLT4G Datasheet
