NVH4L060N065SC1 SiC MOSFET

ON Semiconductor

Description

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 .

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Datasheet Specifications

Part number: NVH4L060N065SC1
Manufacturer: ON Semiconductor ↗
File Size: 245.74 KB
Datasheet: NVH4L060N065SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 74 nC)
* Low Capacitance (Coss = 133 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Pb
* Free and

Applications

* Automotive On Board Charger
* Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to
* Source Voltage VGS
* 8/+22 V Recommended Op

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NVH4L060N065SC1 SiC MOSFET ON Semiconductor

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