NVH4L080N120SC1 SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET * 80 mohm, 1200 V, M1, TO-247-4L NVH4L080N120SC1 .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

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Datasheet Specifications

Part number: NVH4L080N120SC1
Manufacturer: ON Semiconductor ↗
File Size: 371.08 KB
Datasheet: NVH4L080N120SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with exemption 7a, P

Applications

* Automotive Auxiliary Motor Drive
* Automotive On Board Charger
* Automotive DC
* DC Converter for EV/HEV DATA SHEET www. onsemi. com VDSS 1200 V RDS(ON) TYP 80 mW ID MAX 29 A N
* CHANNEL MOSFET D S1: Kelvin Source G S2: Power Source S1 S2 D S2 S1 G TO

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NVH4L080N120SC1 SiC MOSFET ON Semiconductor

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