NVH4L080N120SC1 - SiC MOSFET

ON Semiconductor

NVH4L080N120SC1 Datasheet Preview — Preview of NVH4L080N120SC1 PDF

Datasheet Details

Part number	NVH4L080N120SC1
Manufacturer	ON Semiconductor ↗
File Size	371.08 KB
Description	SiC MOSFET
Datasheet	NVH4L080N120SC1-ONSemiconductor.pdf

NVH4L080N120SC1 Product details

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

1200 V @ TJ = 175°C.
Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
High Speed Switching with Low Capacitance.
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection).

📁 NVH4L080N120SC1 Similar Datasheet

NVH820S75L4SPB - Automotive 820A Single Side Direct Cooling 6-Pack Power Module (onsemi)

Other Datasheets by ON Semiconductor

NVH4L015N065SC1 - SiC MOSFET
NVH4L018N075SC1 - SiC MOSFET
NVH4L020N120SC1 - SiC MOSFET
NVH4L022N120M3S - SiC MOSFET
NVH4L025N065SC1 - N-Channel MOSFET
NVH4L027N65S3F - N-Channel MOSFET

Published: Sep 1, 2024 |