NVH4L080N120SC1 Datasheet - ON Semiconductor

NVH4L080N120SC1 SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NVH4L080N120SC1 Features

* 1200 V @ TJ = 175°C

* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A

* High Speed Switching with Low Capacitance

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with exemption 7a, P

NVH4L080N120SC1 Datasheet (371.08 KB)