* Typ. RDS(on) = 160 mW
* Ultra Low Gate Charge (QG(tot) = 34 nC)
* High Speed Switching with Low Capacitance (Coss = 49.5 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with ex
NVH4L160N120SC1 Datasheet (353.59 KB)
NVH4L160N120SC1
353.59 KB
Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW.
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