NVH4L160N120SC1

SiC MOSFET

ON Semiconductor

NVH4L160N120SC1 Features

* Typ. RDS(on) = 160 mW

* Ultra Low Gate Charge (QG(tot) = 34 nC)

* High Speed Switching with Low Capacitance (Coss = 49.5 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with ex

NVH4L160N120SC1 Datasheet (353.59 KB)

NVH4L160N120SC1 Datasheet Preview — Preview of NVH4L160N120SC1 PDF

Datasheet Details

Part number:

NVH4L160N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

353.59 KB

Description:

Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET

* 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW.

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NVH4L160N120SC1 SiC MOSFET ON Semiconductor

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