PZTA96ST1G - High Voltage Transistor

Features

These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

onsemi

Datasheet Details

Part number	PZTA96ST1G
Manufacturer	onsemi
File Size	70.55 KB
Description	High Voltage Transistor
Datasheet	PZTA96ST1G Datasheet
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Full PDF Text Transcription

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PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD W 1.5 Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1.

Published: Mar 13, 2018 |