MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D.

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Datasheet Specifications

Part number: MGW12N120D
Manufacturer: ON
File Size: 168.58 KB
Datasheet: MGW12N120D_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Features

* GATE COLLECTOR EMITTER COLLECTOR CASE 340K
* 01 TO
* 247AE ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co
* packaged IGBT’s save space, reduce assembly time and cost.
* Industry Standard High Power TO
* 247 Package with

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MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode ON

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