MGW12N120D Datasheet (ON) - Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGW12N120D, Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

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MGW12N120D Features

* GATE COLLECTOR EMITTER COLLECTOR CASE 340K

* 01 TO

* 247AE ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,