MGW12N120D Datasheet, Diode, ON

MGW12N120D Features

  • Diode e 11. Reverse Biased Safe Operating Area 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E

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Part number:

MGW12N120D

Manufacturer:

ON

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168.58kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor with anti-parallel diode.

Datasheet Preview: MGW12N120D 📥 Download PDF (168.58kb)
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MGW12N120D Application

  • Applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient op

TAGS

MGW12N120D
Insulated
Gate
Bipolar
Transistor
with
Anti-Parallel
Diode
ON

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Stock and price

Rochester Electronics LLC
TRANS IGBT CHIP N-CH 1.2KV 20A
DigiKey
MGW12N120D
0 In Stock
Qty : 109 units
Unit Price : $2.78
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