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MJE271 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

MJE271 Description

www.DataSheet4U.com MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors .

MJE271 Features

* High Safe Operating Area
* Collector
* Emitter Sustaining Voltage
* High DC Current Gain VCEO(sus) = 100 Vdc (Min) hFE @ 120 mA, 10 V = 1500 (Min) IS/B @ 40 V, 1.0 s = 0.375 A http://onsemi. com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ

MJE271 Applications

* and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

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Datasheet Details

Part number
MJE271
Manufacturer
ON
File Size
84.82 KB
Datasheet
MJE271_ONSemiconductor.pdf
Description
COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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COMPLEMENTARY POWER DARLINGTON TRANSISTORS ON
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