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FCH47N60N N-Channel MOSFET

FCH47N60N Description

MOSFET * N-Channel, SUPREMOS) 600 V, 47 A, 62 mW FCH47N60N .
The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super. junction (SJ) technology employing a deep trench filling proce.

FCH47N60N Features

* 650 V @ TJ = 150°C
* RDS(on) = 51.5 mW (Typ. ) @ VGS = 10 V, ID = 23.5 A
* Ultra Low Gate Charge (Typ. Qg = 115 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 511 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free and is RoHS Comp

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N-Channel MOSFET ON Semiconductor
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