FDV301N-F169, FDV301N - N-Channel Digital FET

ON Semiconductor

FDV301N-F169 Datasheet Preview — This datasheet PDF includes multiple part numbers: FDV301N-F169, FDV301N. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	FDV301N-F169, FDV301N
Manufacturer	ON Semiconductor ↗
File Size	199.06 KB
Description	N-Channel Digital FET
Datasheet	FDV301N-ONSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FDV301N-F169, FDV301N. Please refer to the document for exact specifications by model.

FDV301N-F169 Product details

Description

This N Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. channel FET can replace several different digital transistors, with different bias

Features

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
Replace Multiple NPN Digital Transistors with One DMOS FET.
This Device is Pb.
Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.

📁 FDV301N-F169 Similar Datasheet

FDV301N - N-Channel Digital FET (Fairchild Semiconductor)
FDV303N - N-Channel Digital FET (Fairchild Semiconductor)
FDV304P - Digital FET/ P-Channel (Fairchild Semiconductor)
FDV305N - 20V N-Channel MOSFET (Fairchild Semiconductor)
FDV-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter (Premo)
FDV0530 - Metal Alloy Inductors (TOKO)
FDV0618 - Metal Alloy Inductors (TOKO)
FDV0620 - Metal Alloy Inductors (TOKO)

Other Datasheets by ON Semiconductor

FDV302P - P-Channel Digital FET
FDV304P-F169 - P-Channel Digital FET

Published: Jan 23, 2023 |