FGY100T65SCDT - IGBT

ON Semiconductor

FGY100T65SCDT Datasheet Preview — Preview of FGY100T65SCDT PDF

Datasheet Details

Part number	FGY100T65SCDT
Manufacturer	ON Semiconductor ↗
File Size	421.92 KB
Description	IGBT
Datasheet	FGY100T65SCDT-ONSemiconductor.pdf

FGY100T65SCDT Product details

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co-efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.5 V (Typ. ) @ IC = 100 A.
High Input Impedance.
Fast Switching.
Short Cirruit Rated 5 ms.
Tighten Parameter Distribution.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Oct 3, 2022 |