FGY120T65SPD-F085 - IGBT

ON Semiconductor

FGY120T65SPD-F085 Datasheet Preview — Preview of FGY120T65SPD-F085 PDF

Datasheet Details

Part number	FGY120T65SPD-F085
Manufacturer	ON Semiconductor ↗
File Size	473.92 KB
Description	IGBT
Datasheet	FGY120T65SPD-F085-ONSemiconductor.pdf

FGY120T65SPD-F085 Product details

Description

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time Voltage Transient Ruggedness (Note 2) @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C @ TC = 25°C TJ Operating Junc

Features

Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ. ) @ IC = 120 A.
Maximum Junction Temperature : TJ = 175°C.
Positive Temperature Co.
efficient.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Dynamically Tested.
Short Circuit Ruggedness > 6 ms @ 25°C.
Copacked with Soft, Fast Recovery Extremefast Diode.
AEC.
Q101 Qualified and PPAP Capable.
This is a Pb.
Fre.

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Published: Oct 3, 2022 |