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MBR1100 Axial Lead Rectifier

MBR1100 Description

MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal *to *silicon power diode.Sta.

MBR1100 Features

* epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low
* voltage, high
* frequency inverters, free wheeling diodes, and polarity protection diodes. Features
* Low Reverse Current
* Low Stored Charge, Majority C

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Axial Lead Rectifier ON Semiconductor
ON Semiconductor MBR1100-like datasheet