Datasheet Details
| Part number | OSG65R900AF |
|---|---|
| Manufacturer | Oriental Semiconductor |
| File Size | 908.50 KB |
| Description | Enhancement Mode N-Channel Power MOSFET |
| Datasheet |
 OSG65R900AF-OrientalSemiconductor.pdf
|
| Part number | OSG65R900AF |
|---|---|
| Manufacturer | Oriental Semiconductor |
| File Size | 908.50 KB |
| Description | Enhancement Mode N-Channel Power MOSFET |
| Datasheet |
OSG65R900AF-OrientalSemiconductor.pdf
|
OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. VDS, min@Tjmax ID, pulse RDS(ON), max @ VGS=10 V Qg 700 V 15 A 900 mΩ 7.6 nC Schematic and Package Information Schematic Diagram Pin Assignment Top View TO251 TO252 TO220F TO220 OSG65R900AF OSG65R900DF OSG65R900
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