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OSG65R900AF Datasheet - Oriental Semiconductor

OSG65R900AF Enhancement Mode N-Channel Power MOSFET

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. * VDS, min@Tjmax * ID, pulse * RDS(ON.

OSG65R900AF-OrientalSemiconductor.pdf

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Datasheet Details

Part number:

OSG65R900AF

Manufacturer:

Oriental Semiconductor

File Size:

908.50 KB

Description:

Enhancement mode n-channel power mosfet.

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