OSG65R900DF, OSG65R900AF Datasheet - Oriental Semiconductor

OSG65R900DF - Enhancement Mode N-Channel Power MOSFET

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

* VDS, min@Tjmax * ID, pulse * RDS(ON

Datasheet Details

OSG65R900DF, OSG65R900AF

Oriental Semiconductor

908.50 KB

Enhancement mode n-channel power mosfet.

This datasheet PDF includes multiple part numbers: OSG65R900DF, OSG65R900AF.
Please refer to the document for exact specifications by model.

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