PJF2NA60
Pan Jit International
454.35kb
600v n-channel mosfet.
TAGS
📁 Related Datasheet
PJF2NA90 - 900V N-Channel MOSFET
(Pan Jit International)
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90
900V N-Channel MOSFET
Voltage
900 V Current
2A
Features
RDS(ON), VGS@10V,ID@1A<6.4Ω High switchin.
PJF2N60 - 600V N-Channel Enhancement Mode MOSFET
(Pan Jit International)
PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low .
PJF2N70 - 700V N-Channel Enhancement Mode MOSFET
(Pan Jit International)
PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
• 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate .
PJF20N65 - 650V N-Channel MOSFETs
(Potens semiconductor)
650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog.
PJF20N65D - N-Channel MOSFETS
(Potens semiconductor)
650V N-Channel MOSFETS
PJF20N65D
General Description
These N-Channel enhancement mode power field effect transistors are using Super Junction techno.
PJF20N70T - N-Channel MOSFETS
(Potens semiconductor)
700V N-Channel MOSFETS
PJF20N70T
General Description
These N-Channel enhancement mode power field effect transistors are using Super Junction techno.
PJF21N50T - N-Channel MOSFETS
(Potens semiconductor)
Preliminary datasheet
500V N-Channel MOSFETS
PJF21N50T
General Description
These N-Channel enhancement mode power field effect transistors are usin.
PJF24N10 - 100V N-Channel Enhancement Mode MOSFET
(Pan Jit International)
PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(.
PJF04N70L - N-Channel MOSFETS
(Potens semiconductor)
700V N-Channel MOSFETs
PJF04N70L
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.
PJF10N60 - 600V N-Channel Enhancement Mode MOSFET
(Pan Jit International)
PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.
Stock and price